http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst2605 -4.0a , -30v , r ds(on) 80 m ?? p-channel enhancement mode mosfet 09-oct-2014 rev. e page 1 of 4 b l f h c j d g k a e top view 2605 ???? ? rohs compliant product a suffix of ?-c? specifies halogen and lead-free description sst2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiv eness device. the sot-26 package is universally used for all commercial-industrial applications. features ? simple drive requirement ? smaller outline package ? surface mount package marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a =25c -4 continuous drain current 3 t a =70c i d -3.3 a pulsed drain current 1 i dm -20 a power dissipation t a =25c p d 2 w linear derating factor 0.016 w / c operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ? ja 62.5 c / w sot-26 date code millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst2605 -4.0a , -30v , r ds(on) 80 m ?? p-channel enhancement mode mosfet 09-oct-2014 rev. e page 2 of 4 electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250ua bv ds / t j - -0.02 - v/c reference to 25c, i d = -1ma gate-threshold voltage v gs(th) -1 - -3 v v ds =v gs , i d = -250ua gate-body leakage current i gss - - 100 na v gs = 20v - - -1 v ds = -24v, v gs =0, t j =25c drain-source leakage current i dss - - -25 ua v ds = -24v, v gs =0, t j =55c - - 80 v gs = -10v, i d = -4a drain-source on-resistance 2 r ds(on) - - 120 m ? v gs = -4.5v, i d = -3a forward transconductance g fs - 6 - s v ds = -5v, i d = -4a dynamic total gate charge 2 q g - 5.5 8.8 gate-source charge q gs - 1 - gate-drain charge q gd - 2.6 - nc v ds = -24v, v gs = -4.5v, i d = -4a turn-on delay time 2 t d(on) - 7 - rise time t r - 6 - turn-off delay time t d(off) - 18 - fall time t f - 4 - ns v dd = -15v, v gs = -10v, r g =3.3 ? , r d =15 ? , i d = -1a input capacitance c iss - 400 640 output capacitance c oss - 90 - reverse transfer capacitance c rss - 30 - pf v gs =0v v ds = -25v, f=1.0mhz source-drain diode diode forward voltage 2 v sd - - -1.2 v i s = -1.6a, v gs =0v reverse recovery time 2 t rr - 21 - ns reverse recovery charge q rr - 14 - nc i s = -4a, v gs =0 di/dt=100a/us notes: 1. pulse width limited by safe operating area. 2. pulse width 300us, duty Q cycle 2% Q 3. surface mounted on 1 in 2 copper pad of fr4 board, 156c/w when mounted on min. copper pad.
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst2605 -4.0a , -30v , r ds(on) 80 m ?? p-channel enhancement mode mosfet 09-oct-2014 rev. e page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst2605 -4.0a , -30v , r ds(on) 80 m ?? p-channel enhancement mode mosfet 09-oct-2014 rev. e page 4 of 4 characteristic curves
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